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PD - 9.1103B
IRF7204
HEXFET ? Power MOSFET
l
l
l
l
l
l
Adavanced Process Technology
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
S
S
S
G
1
2
3
4
8
7
6
5
A
D
D
D
D
V DSS = -20V
R DS(on) = 0.060 ?
l Fast Switching
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
To p V ie w
S O -8
I D = -5.3A
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ 10V
-5.3
I D @ T A = 70°C
I DM
P D @T C = 25°C
V GS
dv/dt
T J, T STG
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
-4.2
-21
2.5
0.020
± 12
-1.7
-55 to + 150
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max.
Units
R θ JA
Maximum Junction-to-Ambient ?
–––
–––
50
°C/W
8/25/97
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